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200BG 2012A 10427102 TDA8001T TA123 MG6333 1H222 PHAWOZ
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  Datasheet File OCR Text:
  v rrm = 800 v - 1600 v i f = 100 a features ? terminals and the mounting plate are electrically isolated three phase package ? types up to 1600 v v rrm ? inverters for ac motors ? power supply units for dc motors ? dc power supply units for battery c h ? general purpose dc power supply u m3p100a-80 thru m3p100a-160 maximum ratings at t j = 25 c unless otherwise specified silicon standard recover y diode ? modules can be installed in the same cooling fin as other modules, thus saving installation space applications ? diode chips are coated with a glass of zinc oxide, making them highly resistant to te mperature and huminity variation ? 6 diode chips are connected to the 3-phase bridge rectifying circuit inside the module; a cost effective feature parameter symbol unit repetitive peak reverse voltage v rrm v non-repetitive peak reverse voltage v rsm v continuous forward current i f a i 2 ti 2 t a 2 s operating temperature t j c storage temperature t stg c tightening torque kg-cm vibration resistance g dielectric strength net weight g parameter symbol unit diode forward voltage reverse current ma thermal characteristics thermal resistance, junction - case r thjc c/w v r = v rrm, t j = 150 c v 10 10 0.22 0.22 i f = 100 a, t j = 25 c t c 103 c conditions maximum ratings , at t j 25 c , unless otherwise specified electrical characteristics, at tj = 25 c, unless otherwise specified conditions t c = 25 c, t p = 8.3 ms surge non-repetitive forward current, half sine wave i f,sm -40 to 150 v f a m3p100a-80 800 880 100 1200 1600 1700 100 1200 m3p100a-80 m3p100a-160 1.15 1.15 -40 to 150 -40 to 125 150 252 5 2000 vac 1 min 150 5 252 2000 vac 1 min -40 to 125 m3p100a-160 6000 6000 www.genesicsemi.com 1
m3p100a-80 thru m3p100a-160 www.genesicsemi.com 2


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